VN2222LLG
ELECTRICAL CHARACTERISTICS (T C = 25 ° C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
OFF CHARACTERISTICS
Drain ? Source Breakdown Voltage
(V GS = 0, I D = 100 m Adc)
Zero Gate Voltage Drain Current
(V DS = 48 Vdc, V GS = 0)
(V DS = 48 Vdc, V GS = 0, T J = 125 ° C)
Gate ? Body Leakage Current, Forward
(V GSF = 30 Vdc, V DS = 0)
V (BR)DSS
I DSS
I GSSF
60
?
?
?
?
10
500
? 100
Vdc
m Adc
nAdc
ON CHARACTERISTICS (Note 1)
Gate Threshold Voltage
(V DS = V GS , I D = 1.0 mAdc)
Static Drain ? Source On ? Resistance
(V GS = 10 Vdc, I D = 0.5 Adc)
(V GS = 10 Vdc, I D = 0.5 Vdc, T C = 125 ° C)
Drain ? Source On ? Voltage
(V GS = 5.0 Vdc, I D = 200 mAdc)
(V GS = 10 Vdc, I D = 500 mAdc)
On ? State Drain Current
(V GS = 10 Vdc, V DS ≥ 2.0 V DS(on) )
Forward Transconductance
(V DS = 10 Vdc, I D = 500 mAdc)
V GS(th)
r DS(on)
V DS(on)
I D(on)
g fs
0.6
?
?
?
?
750
100
2.5
7.5
13.5
1.5
3.75
?
?
Vdc
W
Vdc
mA
m mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
(V DS = 25 Vdc, V GS = 0,
f = 1.0 MHz)
C iss
C oss
C rss
?
?
?
60
25
5.0
pF
SWITCHING CHARACTERISTICS (Note 1)
Turn ? On Delay Time
Turn ? Off Delay Time
(V DD = 15 Vdc, I D = 600 mA,
R gen = 25 W , R L = 23 W )
t on
t off
?
?
10
10
ns
1. Pulse Test: Pulse Width v 300 m s, Duty Cycle v 2.0%.
ORDERING INFORMATION
VN2222LLG
Device
Package
TO ? 92
(Pb ? Free)
Shipping ?
1000 Unit / Box
?For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
http://onsemi.com
2
相关PDF资料
VP1TTB11RR00000 CONTURA ILL INDICATOR 12V RED
VR001 VIBRATION DATA LOGGER
VSLY3850 IR EMITTER 850NM HIGH SPEED
VSLY5850 IR EMITTER 850NM HIGH SPEED DIP
VSMY2850G IR EMITTER 850NM HIGH SPEED SMD
VSMY7850X01-GS08 IR EMITTER 850NM HIGH SPEED SMD
VSOP38336 IC SIGNAL CONDITIONING 36KHZ QFN
WALLS-C4600-001 SYNJETWIRE HARNESS 4WIRE 600MM
相关代理商/技术参数
VN2222LL/D 制造商:未知厂家 制造商全称:未知厂家 功能描述:Small Signal MOSFET 150 mAmps, 60 Volts
VN2222LLG 功能描述:MOSFET 60V 150mA N-Channel RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
VN2222LL-G 功能描述:MOSFET 60V 7.5Ohm RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS(导通):0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube
VN2222LL-G P002 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN2222LL-G P003 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN2222LL-G P005 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN2222LL-G P013 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET
VN2222LL-G P014 制造商:Supertex Inc 功能描述:N-CH Enhancmnt Mode MOSFET